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Answer to Question #282105 in Electrical Engineering for MD HUMAYAN KABIR
Question #282105
Consider an n+-poly-Si-gated n-MOSFET with substrate dopant concentration NA =
1016 cm-3, gate-oxide thickness tox = 0.12 μm, and Qox/q = 9 × 1010 cm-2. Calculate
the threshold voltage, VT, of the MOS transistor.
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