Answer to Question #307268 in Solid State Physics for Johannes Steven

Question

Question 5

 

5.1​ The electron and hole mobilities in a Si sample are 0.135 and 0.48m2/V-s respectively. ​Determine the conductivities of intrinsic Si at 300 K if the intrinsic carrier concentration is 1.5 x 106 atom/m3. The sample is then doped with 1023 phosphorus atom/m3. Determine the equilibrium holeconcentration, conductivity, and position of the Fermi level relative to the intrinsic level.​(5)

 

5.2​ Indicate on an energy level diagram the conduction and valence bands, donor and acceptor states and the position of Fermi level for

(i) an intrinsic semiconductor.

(ii) a n-type semiconductor.

(iii) a p-type semiconductor.​​​​​​​​(5)

Answer 1

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