Assume that gallium arsenide has dopant concentration of N d =1*10^ 13 cm^ -3 and Na 2.5*10^ 13 cm^ -3 at T = 300K (n = 1.8 X 10¹6 cm3, electron's mobility = 8500 and hole's mobility = 400). Find the following
a) Is this material being p-type or n-type?
b) What is the hole's concentration?
c) What is the electrons concentration?
d) Find the conductivity due to majority carriers.
e) Find the conductivity due to minority carriers.
a) p-type
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