Answer to Question #210243 in Optics for bankai

Question

. a) Consider a silicon p-n junction at T = 300 K with doping concentrations of NA = 10^16 cm-3 . Given that the built-in voltage Vbi = 0.7 V, determine the doping concentration of the n-side of the junction. 

b) Derive an expression for the width of the depletion region in terms of Vbi and the maximum electric field |𝐸𝑚| at x = 0

c) Derive an expression for xp in terms of Vbi. Hence, find a numerical value for |𝐸𝑚| and the width of the depletion region

Answer 1

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