Answer to Question #58038 in Solid State Physics for rriaz

Question

In MOSFET at strong inversion electrons confined to triangular quantum well, electrons occupy only 1 or 2 lowest subbands.
and the Van Dort model gives the quantum mechanical intrinsic carrier density in inversion channel via increased energy band-gap(ΔE).
N(QM) = N(CL) × Exp(-ΔE/2kt) this carrier amount is very high.
But density of states for inversion charges in subbads reduced from the higher 3-D density to the lower 2-D density.

Then still HOW the above Van Dort's formula giving that high amount of charge..?

Answer 1

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